Product Info

Inorganic protective film is used for high accuracy and high
Achieve reliability. Temperature coefficient of resistance: ±
100pp/℃ to ±5ppm/℃, resistance tolerance: ±0.5% to ±0.05%. Low noise, sulfur-resistant.

Achieves compact size and high power with a unique structure. Also advantageous for temperature cycle characteristics. Lineup of long side terminal and short side terminal. Choice of high heat resistance (operating temperature: up to 175°C) and low heat activation type (operating temperature up to 155°C). Electrode types with bottom electrodes and U-shaped electrodes are also available.

Achieves a significant increase in rated power while maintaining the characteristics of RG through a unique structure. 2010 to 6432 sizes, rated power (0.5 to 3W), sulfur-resistant products.

A single element achieves wideband attenuation characteristics. DC to 10GHz. 0 to 10dB. Lineup includes sizes from 1005 to 3042.

Easily realize temperature drift correction circuits for high frequency GaAs amplifiers. DC to 6GHz.
Ten types of attenuation and various temperature coefficients are available, allowing you to select from a lineup of over 80 types to suit the characteristics of your amplifier.

High frequency attenuation up to 30GHz
A compact surface mount type attenuator with a size of 2012.

The unique thin film characteristics achieve a relative resistance tolerance of ±0.01% and a relative temperature coefficient of resistance of ±1ppm/℃. Networking is possible while maintaining the characteristics of the RG series.